inchange semiconductor isc product specification isc silicon npn power transistor 2SD1663 description high collector-base breakdown voltage- : v (br)cbo = 1500v (min.) high switching speed wide area of safe operation applications designed for power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ces collector- emitter voltage 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 7.7 v i c collector current-continuous 5 a i b b base current-continuous 3 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1663 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.5a; l= 50mh 700 v v ce (sat) collector-emitter saturation voltage i c = 4.5a; i b = 2a 2.0 v v be (sat) base-emitter saturation voltage i c = 4.5a; i b = 2a 1.5 v i ebo emitter cutoff current v eb = 7.7v; i c = 0 100 a i cbo collector cutoff current v cb = 750v; i e = 0 v cb = 1500v; i e = 0 50 1.0 a ma h fe dc current gain i c = 1a; v ce = 5v 18 50 switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = 2.5a, i b1 = 0.5a, i b2 = -1a 0.5 s ? h fe classifications q p 18-34 18-50 isc website www.iscsemi.cn 2
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